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A Roadmap for Controlled and Efficient n‐Type Doping of Self‐Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy |
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| Authors: | Marta Orrù Eva Repiso Stefania Carapezzi Alex Henning Stefano Roddaro Alfonso Franciosi Yossi Rosenwaks Anna Cavallini Faustino Martelli Silvia Rubini |
| Affiliation: | 1. IOM CNR Laboratorio TASC, Trieste, Italy;2. Dipartimento di Fisica, Università degli Studi di Trieste, Trieste, Italy;3. Department of Physics and Astronomy, Università di Bologna, Bologna, Italy;4. Department of Physical Electronics, School of Electrical Engineering, Tel‐Aviv University, Ramat‐Aviv, Israel;5. NEST, Scuola Normale Superiore and Istituto Nanoscienze CNR, Pisa, Italy;6. Elettra‐Sincrotrone Trieste S.C.p.A., Area Science Park, Trieste, Italy;7. IMM CNR, Roma, Italy |
| Abstract: | N‐type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n‐type GaAs nanowires with carrier density as high as 1020 electron cm?3 by self‐assisted molecular beam epitaxy using Te donors is demonstrated here. Carrier density and electron mobility of highly doped nanowires are extracted through a combination of transport measurement and Kelvin probe force microscopy analysis in single‐wire field‐effect devices. Low‐temperature photoluminescence is used to characterize the Te‐doped nanowires over several orders of magnitude of the impurity concentration. The combined use of those techniques allows the precise definition of the growth conditions required for effective Te incorporation. |
| Keywords: | carrier density doping semiconductor nanowires |