Preparation of cobalt oxide films by plasma-enhanced metalorganic chemical vapour deposition |
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Authors: | Eiji Fujii Hideo Torii Atsushi Tomozawa Ryoichi Takayama Takashi Hirao |
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Affiliation: | (1) Central Research Laboratories, Matsushita Electric Industrial Co. Ltd, Hikaridai, Seika-cho, Soraku-gun, 619-02 Kyoto, Japan |
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Abstract: | Co oxide films were prepared on glass substrates at 150–400°C by plasma-enhanced metalorganic chemical vapour deposition using cobalt (II) acetylacetonate as a source material. NaCl-type CoO films were formed at low O2 flow rate of 7cm3 min–1 and at a substrate temperature of 150–400°C. The CoO films possessed (100) orientation, independent of substrate temperature. Deposition rates of the CoO films were 40–47 nm min–1. The CoO film deposited at 400 °C was composed of closely packed columnar grains and average diameter size at film surface was 60 nm. At high O2 flow rate of 20–50 cm3 min–1, high crystalline spinel-type Co3O4 films were formed at a substrate temperature of 150–400°C. The Co3O4 film deposited at 400°C possessed (100) preferred orientation and the film deposited at 150°C possessed (111) preferred orientation. Deposition rates of the Co3O4 films were 20–41 nm min–1. Both Co3O4 films with (100) and (111) orientation had columnar structure. The shape and average size of the columnar grains at the film surface were different; a square shape and 35 nm for (100)-oriented Co3O4 film and a hexagonal shape and 60 nm for (111)-oriented film, respectively. |
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