Improved AlGaAs/GaAs HBT performance by InGaAs emitter cap layer |
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| Authors: | Nagata K. Nakajima O. Nittono T. Ito H. Ishibashi T. |
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| Affiliation: | NTT Electrical Communications Laboratories, Atsugi, Japan; |
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| Abstract: | The effects of the emitter resistance reduction on the DC and high-frequency characteristics in an AIGaAs/GaAs HBT with an InGaAs emitter cap layer are investigated. In fabricated devices, a transconductance per unit area of 16mS/?m2 and a cutoff frequency of 80 GHz have been achieved. |
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