Silicon micromachined EBG resonator and two-pole filter with improved performance characteristics |
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| Authors: | Euler T Papapolymerou J |
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| Affiliation: | Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA; |
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| Abstract: | A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebyshev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 /spl mu/m thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds. |
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