| DPLBT型高频硅光电负阻器件的研制 |
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| 引用本文： | 郑云光,张世林,沙亚男,郭维廉,李树荣,张振宇,唐明浩,黄杰. DPLBT型高频硅光电负阻器件的研制[J]. 半导体光电, 2002, 23(1): 16-19,32. DOI: 10.3969/j.issn.1001-5868.2002.01.005 |
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| 作者姓名： | 郑云光 张世林 沙亚男 郭维廉 李树荣 张振宇 唐明浩 黄杰 |
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| 作者单位： | 1. 天津大学电子信息工程学院,天津,300072;2. 河北半导体研究所,河北石家庄,050051 |
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| 基金项目： | 天津市自然科学基金;983601411; |
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| 摘 要： | 研制出特征频率fT≥220MHz,且具有较高光电灵敏度和最大峰值电流的光电负阻器件--达林顿光电λ型双极晶体管(DPLBT),并首先用发光二极管(LED)和光电负阻器件(DPLBT)封装成一种和常规光电耦合器不同的具有光电流开关、光控电流双稳态和光控正弦波振荡多种功能的新型光电耦合器(PCDPLBT).
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| 关 键 词： | 光电负阻器件 光学双稳态 光控正弦波振荡器 光电耦合器 |
| 文章编号： | 1001-5868(2002)01-0016-04 |
| 修稿时间： | 2001-07-30 |
Fabrication of DPLBT High Frequency Silicon Photo-negative Resistance Device |
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| ZHENG Yun guang ,ZHANG Shi lin ,SHA Ya nan ,GUO Wei lian ,LI Shu rong ,ZHANG Zhen yu ,TANG Ming hao ,HUANG Jie. Fabrication of DPLBT High Frequency Silicon Photo-negative Resistance Device[J]. Semiconductor Optoelectronics, 2002, 23(1): 16-19,32. DOI: 10.3969/j.issn.1001-5868.2002.01.005 |
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| Authors: | ZHENG Yun guang ZHANG Shi lin SHA Ya nan GUO Wei lian LI Shu rong ZHANG Zhen yu TANG Ming hao HUANG Jie |
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| Affiliation: | ZHENG Yun guang 1,ZHANG Shi lin 1,SHA Ya nan 1,GUO Wei lian 1,LI Shu rong 1,ZHANG Zhen yu 2,TANG Ming hao 2,HUANG Jie 2 |
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| Abstract: | Photo negative resistance device--Darlington photo Lambda bipolar transistor(DPLBT) with the cut off frequency f T over 220 MHz and the higher photo sensitivity and maximum peak current has been fabricated. A new photocoupler with the function of the photocurrent switching, optical bistability and the light controlled sine wave oscillation has been packaged by using a LED and a DPLBT for the first time. It is different from the conventional photo insulator. |
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| Keywords: | photo negative resistance device optical bistability light controlled sine wave oscillator photo insulator |
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