Oxygen diffusion through Al-doped amorphous SiO2 |
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Authors: | Yiguang Wang Yongho Sohn Linan An Yi Fan Ligong Zhang |
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Affiliation: | (1) Advanced Materials Processing and Analysis Center (AMPAC) and Department of Mechanical, Materials and Aerospace Engineering, University of Central Florida, 32816 Orlando, FL;(2) Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 130032 Changchun, China |
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Abstract: | Oxygen (O) diffusion through pure and aluminum (Al)-doped amorphous silica is investigated by using secondary ion mass spectrometry
to profile the diffusion of an18O tracer. The oxides are formed by the thermal oxidation of polymer-derived SiCN and SiAlCN ceramics. The authors demonstrate
that a small amount of Al dopant can significantly inhibit both the interstitial and network diffusion of O. The activation
energy of O network diffusion for Al-doped silica is two times higher than that for pure silica. The results are discussed
in terms of the modification of Al doping on the network structure of the otherwise pure silica.
This article was presented at the Multicomponent-Multiphase Diffusion Symposium in Honor of Mysore A. Dayananda, which was
held during TMS 2006, the 135th Annual Meeting and Exhibition, March 12–16, 2006, in San Antonio, TX. The symposium was organized
by Yongho Sohn of University of Central Florida, Carelyn E. Campbell of National Institute of Standards and Technology, Richard
D. Sisson, Jr., of Worcester Polytechnic Institute, and John E. Morral of Ohio State University. |
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Keywords: | carbonitrides diffusivity measurements error function modeling experimental study mass spectrometry oxide systems tracer diffusivity |
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