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Characterization of a photoresist with wavelength selected tone
Authors:Pederson  LA Neureuther  AR Hinsberg  WD MacDonald  SA
Affiliation:IBM Almaden Res. Center, San Jose, CA;
Abstract:The line edge profile simulation of a tone-switching resist system, obtained from the dissolution model of dual-sensitized, novolak-based resist in aqueous developer, is described. The model incorporates the actinic response of both a positive and a negative sensitizer in a two-pattern lithographic process that simultaneously exposes the same resist film. These response data are combined with dissolution rate measurements to establish a model for the resist and carry out SAMPLE simulation of resist line edge profiles for contact and projection printing. The model predictions are compared with SEM micrographs of exposed resist features
Keywords:
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