多量子阱半导体激光器的瞬态响应特性分析

根据光增益与载流子密度的对数关系，在受激发射速率中分别引入了增益饱和项和载流子复合项，通过适应于多量子阱激光器的速率方程，从理论上证明了短腔结构存在与阈值电流最小值对应的最佳阱数。给出了多量子阱激光器的瞬态呼应特性的直接仿真结果及相图，分析了注入电流、阱数和腔长对其激射阈值、开关延误时间、弛豫振荡频率和光输出等能量的影响。

Analysis of Transient Response Characteristics for Multi-quantum-well Lasers

Based on the logarithmic relation of gain to carrier dens ity,a gain saturation and carrier recombination terms are introduced into the st imulated-emission rate.A simple rate equation is derived for MQW lasers. It has been proved that there exists an optimal well-number for the minimum threshold current in short lasing cavity.Analysis on transient response characteristics of MQW lasers is made.The effect of current, well numbers and ca vity length on threshold, turn-on delay, relaxation oscillations frequency and o utput power is described.