基于场发射三极管结构的离子轰击分析

离子轰击影响场致发射器件的稳定性和工作寿命。本文以碳纳米管场发射三极管结构为例模拟了气体—电子碰撞电离产生的正离子回轰阴极的全过程，对模型中的平面阴极受损的位置和程度进行了的分析；为了减小离子轰击的影响，在三极管中引入了第二栅极利用其离子陷阱效应，并模拟了使用第二栅极后正离子回轰阴极的全过程和阴极受损情况。模拟结果证明，加入离子陷阱结构后可以明显改善场致发射三极管的离子轰击问题。

Analysis of Ion Bombardment Based on Field Emission Triode

The ion bombardment affecs the stability and lifetime of the field emission device. In the field emission triode, the residual gas collides with electrons and ionize, then many ions produce. Due to the electrical field the ions bombard on the cathode and may damage it. To reduce the ion bombardment, the second gate electrode is added. This paper simulates the whole process and analyzes the damage to the plane cathode quantitatively. Comparing the two structures, the effect of the ion bombardment is lightened distinctly with the structure of ion trap.