A two-dimensional numerical approach to achieve a silicon BCCD celloptimal design |
| |
| Authors: | Carquet M. Rigaud D. Touboul A. Thenoz Y. |
| |
| Affiliation: | Centre d'Electron. de Monpellier, CNRS, Montpellier; |
| |
| Abstract: | The single charge stored in a silicon buried-channel charge-coupled device (BCCD) is studied under different technological specification. The approach is to seek an accurate determination of this parameter by using a 2-D numerical device analysis program. The calculated data are compared to experimentally measured BCCD characteristics. These investigations have led to some trends for design optimization for designers whose main motivation is the scaling down of BCCDs |
| |
| Keywords: | |
|
