稀氢氟酸处理氢终结化纳米硅制备研究

文中介绍氧终结化纳米硅膜通过超高真空条件下氧氩基硅蒸发沉积法制备,利用稀氢氟酸处理得到氢终结化纳米硅。硅膜的表面状态由红外线测量法测定,结果得出纳米硅膜中的所有Si-O键全部被Si-H键取代。退火处理后样品在光子能量为1.65eV(750nm)和2.2eV(560nm)处表现出很强的光致发光强度。然而经稀氢氟酸处理后样品无这两处光致发光信号,这说明这两处光致发光信号是由Si-O产生。

H-Termination of Nanocrystalline Silicon Films by HF Solution Treatment

Oxygen（O）-terminated nanocrystalline silicon（nc-Si） films were prepared by using silicon evaporation in an ultra-high vacuum with oxygen and argon radicals, and hydrogen（H）-termination of the nc-Si by HF solution treatment was tried in this work. The surface state of nc-Si in the fillms were evaluated by infrared（IR） absorption measurements. The surface state of nc-Si in the films, which revealed that all of the Si-O bonds in the nc-Si films were replaced with Si-H bonds by HF solution treatment. The annealed samples exhibited strong photoluminescence（PL） with two peaks at 1.65eV（750nm） and 2.2eV（560nm）, while no PL was observed from the H-terminated nc-Si. It was found that two PL signals are associated with Si-O related luminescence.