High-speed modulation of strain-compensated InGaAs-GaAsP-InGaP multiple-quantum-well lasers |
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| Authors: | H Han PN Freeman WS Hobson NK Dutta J Lopata JD Wynn SNG Chu |
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| Affiliation: | Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA; |
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| Abstract: | Small signal direct modulation characteristics of InGaAs-GaAsP-InGaP multiple quantum well ridge waveguide lasers (4.5/spl times/220 /spl mu/m/sup 2/) are described. The compressive strain of four InGaAs quantum wells is compensated by the tensile strain of GaAsP barriers. The lasers have a threshold current of 8 mA and an internal differential quantum efficiency of 80%. A 3-dB bandwidth of 25 GHz is obtained at 54 mA. It is found that the strain-compensated lasers have a K factor as low as 0.15 ns, implying a maximum 3-dB bandwidth of 59 GHz. |
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