Pre-nucleation techniques for enhancing nucleation density and adhesion of low temperature deposited ultra-nanocrystalline diamond |
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Authors: | Yen-Chih Lee Su-Jien Lin Cheng-Yu Lin Ming-Chuen Yip Weileun Fang I-Nan Lin |
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Affiliation: | aDepartment of Material Science and Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R. O. C.;bDepartment of Power Mechanical Engineering, National Tsing-Hua University, Hsin-Chu 300, Taiwan, R. O. C.;cDepartment of Physics, Tamkang University, Tamsui 251, Taiwan, R. O. C. |
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Abstract: | Effect of pre-nucleation techniques on enhancing nucleation density and the adhesion of ultra-nanocrystalline diamond (UNCD) deposited on the Si substrates at low temperature were investigated. Four different pre-nucleation techniques were used for depositing UNCD films: (i) bias-enhanced nucleation (BEN); (ii) pre-carburized and then ultrasonicated with diamond powder solution (PC-U); (iii) ultrasonicated with diamond and Ti mixed powder solution (U-m); (iv) ultrasonicated with diamond powder solution (U). The nucleation density is lowest for UNCD/U-substrate films ( 108 grains/cm2), which results in roughest surface and poorest film-to-substrate adhesion. The UNCD/PC-U-substrate films show largest nucleation density ( 1 × 1011 grains/cm2) and most smooth surface (8.81 nm-rms), whereas the UNCD/BEN-substrate films exhibit the strongest adhesion to the Si substrates (critical loads = 67 mN). Such a phenomenon can be ascribed to the high kinetic energy of the carbon species, which easily form covalent bonding, Si–C, and bond strongly to both the Si and diamond. |
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Keywords: | UNCD Adhesion Pre-nucleation MPECVD |
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