| 微电子器件制备中CMP抛光技术与抛光液的研究 |
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| 引用本文： | 刘玉岭,李薇薇. 微电子器件制备中CMP抛光技术与抛光液的研究[J]. 电子工业专用设备, 2004, 33(6): 22-25 |
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| 作者姓名： | 刘玉岭 李薇薇 |
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| 作者单位： | 河北工业大学微电子研究所,天津,300130;河北工业大学微电子研究所,天津,300130 |
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| 摘 要： | 介绍了河北工业大学微电子研究所发明成果:15～20nm铜的CMP碱性抛光液、阻挡层CMP碱性抛光液,用于介质CMP的120nm水溶胶磨料抛光液、互连插塞钨和铝的CMP纳米SiO2磨料碱性抛光液及ULSI硅衬底CMP抛光液及切削液、磨削液、倒角液和应力控制技术等研究成果。
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| 关 键 词： | CMP 碱性抛光液 水溶胶 应力 |
| 文章编号： | 1004-4507(2004)06-0022-04 |
| 修稿时间： | 2004-05-19 |
A Study of CMP Polishing Technology and Polishing Liquid in Preparation of Microelectronics Devices |
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| LIU Yu-ling,LI Wei-wei. A Study of CMP Polishing Technology and Polishing Liquid in Preparation of Microelectronics Devices[J]. Equipment for Electronic Products Marufacturing, 2004, 33(6): 22-25 |
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| Authors: | LIU Yu-ling LI Wei-wei |
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| Abstract: | The invention fruits of Institute of Microelectronics in hebei University of Technology have been introduced, such as 15～20 nm alkalescence polishing liquid used for Cu CMP, alkalescence polishing liquid used for obstruction CMP, 120 nm hydrosol polishing liquid, alkalescence polishing liquid used by interconnection plug (W or Al) CMP, polishing liquid used for silicon substrate in ULSI and cutting liquid, grind liquid, edge profiling liquid, technology of stress controling. |
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| Keywords: | CMP |
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