| (Ba,Sr)TiO3铁电薄膜制备技术及其研究进展 |
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| 引用本文： | 单连伟,丁碧妍,付兴华,侯文萍,单志强. (Ba,Sr)TiO3铁电薄膜制备技术及其研究进展[J]. 桂林电子科技大学学报, 2003, 23(6): 36-39 |
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| 作者姓名： | 单连伟 丁碧妍 付兴华 侯文萍 单志强 |
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| 作者单位： | 1. 济南大学,材料科学与工程学院,山东,济南,250022
2. 广西大学,资源与环境学院,广西,南宁,530004 |
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| 摘 要： | (Ba,Sr)TiO3(简称BST)铁电薄膜较传统的铁电材料有高介电常数、高击穿场强、快响应速度、居里温度可调等优点,在DRAM、微波调节器等领域具有广阔的发展前景,是目前国际上新型功能材料研究的热点之一.通过对铁电薄膜及其制备技术研究新进展的综合评述,就BST的微观结构、性能及应用,深入分析BST铁电薄膜主要制备技术的优缺点,指出了目前铁电薄膜及其制备技术研究中应注意的问题.
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| 关 键 词： | (Ba Sr)TiO3 铁电薄膜 制备方法 DRAM 微波调节器 |
| 文章编号： | 1001-7437(2003)06-36-04 |
| 修稿时间： | 2003-09-05 |
The Syntheses and the Developments of (Ba,Sr) TiO3 Ferro-electric Thin Films |
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| SHAN Lian-wei,DING Bi-yan,FU Xing-hua,HOU Wen-ping,SHAN Zhi-qiang. The Syntheses and the Developments of (Ba,Sr) TiO3 Ferro-electric Thin Films[J]. Journal of Guilin University of Electronic Technology, 2003, 23(6): 36-39 |
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| Authors: | SHAN Lian-wei DING Bi-yan FU Xing-hua HOU Wen-ping SHAN Zhi-qiang |
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| Affiliation: | SHAN Lian-wei~1,DING Bi-yan~1,FU Xing-hua~1,HOU Wen-ping~1,SHAN Zhi-qiang~2 |
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| Abstract: | Ferroelectric thin film is one of the functional material with attractive applying prospects in DRAM,and tunable microwave devices due to its good properties of high dielectric constancy,high electric breakdown,quick response,tunable Curie temperature etc.Recent studies on ferroelectric thin films and the related processing techniques are reviewed.The microstructure,the characteristics,and the application of ferroelectric thin films are described in this paper.The advantages and disadvantages of different processing methods of ferroelectric thin films are discussed.Some research problems for the processing of this material that need to be paid attention to are put forward. |
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| Keywords: | (Ba Sr) TiO_3 ferroelectric thin films fabrication methods DRAM tunable microwave devices |
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