A technique to compare polythiophene solid-state dye sensitized TiO2 solar cells to liquid junction devices

In this communication, we report on a technique to fabricate solid-state polythiophene-based dye sensitized solar cells (DSSCs) that can be directly compared to analogous liquid junction devices. The device configuration is based on non-porous TiO₂ thin films and one of the three undoped polythiophene hole conductors: poly3-(11 diethylphosphorylundecyl) thiophene], P3PUT, poly(4-undecyl-2,2′-bithiophene), P4UBT, or poly(3-undecyl-2,2′-bithiophene), P3UBT. These polymers were spin coated and cast from organic solutions onto the TiO₂ films. The dense TiO₂ thin films (ca. 30 nm) were deposited on conductive glass via facile spray pyrolysis and sol–gel techniques. After that, cis-(SCN)₂ Bis(2,2′ bipyridyl-4,4′-dicarboxylate) ruthenium(II) (a.k.a. Ru N3 dye) was adsorbed on the TiO₂ surface, and the polythiophenes were utilized as hole conductors in a simplified solar cell geometry. The results were compared to the control DSSC device made with dense TiO₂ and a liquid electrolyte, or 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenylamine)-9,9′-spirobifluorene (a.k.a. Spiro-MeOTAD). The polythiophenes exhibited bandgaps in the range 1.9–2.0 eV, and HOMO energy levels of approximately 5 eV (vs. vacuum). The P3PUT DSSC device exhibited an AM1.5 V_OC=0.8 V, a J_SC=0.1 mA/cm², as well as an IPCE=0.5–1%. The AM1.5 short-circuit photocurrents and quantum efficiencies for DSSCs made with the polythiophenes, the Spiro-MeOTAD and the standard liquid electrolyte (I⁻/I₃⁻) were found to be identical within the limits of experimental uncertainty and reproducibility. Our results indicate that a solid-state replacement to the liquid junction is not necessarily limited by the fundamental aspect of hole transfer, one of the three fundamental aspects that must be met for an efficient DSSC. Rather than suggest that P3UBT or P4UBT could be used to create efficient “organic solar cells” with the exclusion of the Ru dye, we suggest that transparent thiophene compounds could be attractive candidates for high-surface area solid-state DSSCs, and that the technique presented can be applied to other hole conductors. It can allow a verification of one of the things necessary for the DSSC, so that parallel studies using high-surface area materials can proceed with confidence.