MOCVD脉冲生长对InGaN太阳能电池材料的影响

通过对InGaN三元合金的生长方式做对比,发现在相同条件下,因常规生长过程中反应室In的浓度更高,生长出的InGaN中In组分更高。但是由于预反应的原因晶体质量较差,而脉冲生长由于源的分时输运,大幅减小了预反应的发生,提高了晶体质量。但由于生长时反应室In原子浓度变小,In的组分会降低,也会减小In滴的析出。

Influence of MOCVD Pulse Growth on InGaN Solar Cells Materials

In this paper,the methods of InGaN alloy growth are compared.It is found that by conventional method the InGaN alloy tends to have a higher component because of a higher concentration of In atoms in the chamber but results in a poor crystallization quality as the pre-reaction.The one grown by pulse method tends to have a lower component of In and In drop because of a lower concentration of In atoms in the chamber but results in a good crystallization quality as the reduction of pre-reaction.