Oxidation Behavior of a Fully Dense Polymer-Derived Amorphous Silicon Carbonitride Ceramic |
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| Authors: | Lavanya Bharadwaj,Yi Fan,Ligong Zhang,Dapeng Jiang,Linan An,§ |
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| Affiliation: | Advanced Materials Processing and Analysis Center (AMPAC), University of Central Florida, Orlando, Florida 32816;Laboratory of Excited State Process, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China |
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| Abstract: | The oxidation behavior of a polymer-derived amorphous silicon carbonitride (SiCN) ceramic was studied at temperature range of 900°–1200°C using fully dense samples, which were obtained using a novel pressure-assisted pyrolysis technique. The oxidation kinetics was investigated by measuring the thickness of oxide layers. The data were found to fit a typical parabolic kinetics. The measured oxidation rate constant and activation energy of the SiCN are close to those of CVD and single-crystal SiC. The results suggest that the oxidation mechanism of the SiCN is the same as that of SiC: oxygen diffusion through a silica layer. |
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| Keywords: | oxidation amorphous silicon carbonitride |
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