Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe |
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| Authors: | Rao M.V. Kruppa W. |
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| Affiliation: | George Mason University, Department of Electrical & Computer Engineering, Fairfax, USA; |
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| Abstract: | Ion implantation of Si in semi-insulating In0.53Ga0.47As:Fe was discussed. Electrical activation of more than 100%, a broad implant profile and an average electron mobility of 3000 cm2/Vs are observed in layers implanted with a dose of 2 × 1013 cm?2 at 260 keV and annealed at 670°C for 15 min. The results of photoluminescence measurements are also presented. |
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