| 退火温度对生长在TiO2缓冲层上的ZnO薄膜的影响 |
| |
| 引用本文： | 徐林华,李相银,史林兴,沈华.退火温度对生长在TiO2缓冲层上的ZnO薄膜的影响[J].半导体学报,2008,29(10):1992-1997. |
| |
| 作者姓名： | 徐林华 李相银 史林兴 沈华 |
| |
| 作者单位： | 南京理工大学应用物理系,南京,210094;南京理工大学电光学院,南京,210094 |
| |
| 摘 要： | 采用电子束蒸发技术在TiO2缓冲层上沉积了ZnO薄膜，研究了不同的退火温度对薄膜晶化质量及发光性质的影响. 利用X射线衍射仪和扫描探针显微镜分析了薄膜样品的结构性质，利用荧光光谱仪研究了薄膜样品的光致发光性质. 分析结果表明，退火处理后的ZnO薄膜都沿c轴择优生长. 在600℃下退火的样品具有最强的（002）衍射峰、最强的紫外发射和最弱的可见光发射，其晶粒大小均匀，紧密堆积. 而对于在500和700℃下退火的样品，其可见光发射较强. 这表明在600℃下退火的样品具有最好的晶化质量.
|
| 关 键 词： | ZnO薄膜 TiO2缓冲层 晶化质量 光致发光 |
| 收稿时间： | 3/25/2008 7:36:16 AM |
Effect of Annealing Temperature on ZnO Thin Film Grown on a TiO2 Buffer Layer |
| |
| Xu Linhu,Li Xiangyin,Shi Linxing and Shen Hua.Effect of Annealing Temperature on ZnO Thin Film Grown on a TiO2 Buffer Layer[J].Chinese Journal of Semiconductors,2008,29(10):1992-1997. |
| |
| Authors: | Xu Linhu Li Xiangyin Shi Linxing and Shen Hua |
| |
| Affiliation: | Department of Applied Physics,Nanjing University of Science and Technology,Nanjing 210094,China;Department of Applied Physics,Nanjing University of Science and Technology,Nanjing 210094,China;Department of Applied Physics,Nanjing University of Science and Technology,Nanjing 210094,China;Institute of Electronic Engineering and Photo-Electric Technology,Nanjing University of Science and Technology,Nanjing 210094,China |
| |
| Abstract: | ZnO thin films were deposited on TiO2 buffer layers by electron beam evaporation.The effect of annealing temperature on crystalline quality and photoluminescence of the films was studied.The structural characteristics of the as-deposited and annealed films were investigated by an X-ray diffractometer and a scanning probe microscope.The photoluminescence was studied by fluorophotometer.The analysis results show that all the annealed ZnO thin films grown on TiO2 buffer layers are preferentially oriented along... |
| |
| Keywords: | ZnO thin film TiO2 buffer layer crystalline quality photoluminescence |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
