| 掺硅对二氧化钛压敏电阻性能的影响 |
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| 引用本文： | 孟凡明.掺硅对二氧化钛压敏电阻性能的影响[J].电子元件与材料,2006,25(1):27-29. |
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| 作者姓名： | 孟凡明 |
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| 作者单位： | 安徽大学信息材料与器件重点实验室,安徽,合肥,230039 |
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| 基金项目： | 安徽省教育厅科研项目;安徽大学校科研和教改项目;安徽大学校科研和教改项目 |
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| 摘 要： | 采取通用的陶瓷工艺,按配方(摩尔分数)TiO2+0.3%(BaCO3+Bi2O3)+0.075%Ta2O5+x%SiO2,其中x=0.1,0.2,0.3,0.4,0.5,制备试样。经过R-f,C-f和I-V测量,研究了SiO2对(Ba,Bi,Si,Ta)掺杂的TiO2基压敏陶瓷的压敏特性、电容特性及晶粒半导化的影响。结果表明:当x=0.3时,压敏电压最低(E10mA为8V.mm–1),电容量最大(C为30pF,1kHz)及晶粒电阻最小(1.4?)。
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| 关 键 词： | 电子技术 二氧化钛 压敏陶瓷 压敏电压 电容量 晶粒电阻 |
| 文章编号： | 1001-2028（2006）01-0027-03 |
| 收稿时间： | 2005-07-17 |
| 修稿时间： | 2005-07-17 |
Effect of SiO2 on Titania Varistor Ceramics |
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| MENG Fan-ming.Effect of SiO2 on Titania Varistor Ceramics[J].Electronic Components & Materials,2006,25(1):27-29. |
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| Authors: | MENG Fan-ming |
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| Abstract: | Sample was prepared by the typical ceramics technics with the formula of TiO2+0.3%(in mole fraction,the same below)(BaCO3+Bi2O3)+0.075%Ta2O5+x%SiO2,where,x=0.1,0.2,0.3,0.4,0.5.Based on the results of measurements of resistance-frequency,electric capacity-frequency and electric current-voltage,The electrical properties such as breakdown voltage,electric capacity and the semi-conductivity of the samples were investigated.It is found that a sample having TiO2+0.3%(BaCO3+Bi2O3)+0.075%Ta2O5+0.3%SiO2 shows minimum breakdown voltage(E10mA= 8 V.mm–1),maximum electric capacity(C = 30 pF,1 kHz) and minimum grain resistance(1.4 ?). |
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| Keywords: | electronic technology titania varistor ceramics breakdown voltage capacitance grain resistance |
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