| 两级GaAs单片功率放大器 |
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| 引用本文： | 顾炯 陈硕颀. 两级GaAs单片功率放大器[J]. 固体电子学研究与进展, 1991, 11(3): 193-197 |
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| 作者姓名： | 顾炯 陈硕颀 |
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| 作者单位： | 南京电子器件研究所 210016(顾炯，陈硕颀，王福臣，过常宁)，南京电子器件研究所 210016(林金庭) |
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| 摘 要： | 本文报道了两级GaAs单片功率放大器的设计和制作,着重介绍了利用MESFET的小信号模型和直流负载特性设计MESFET在大信号状态下的最佳功率匹配的方法,该方法大大简化了放大器匹配电路的设计.制作在1.9×0.9mm GaAs外延片上的两级放大器,1dB带宽800MHz(670～1470MHz)频带内,最大小信号增益24dB,最大输出功率300mW.功率附加效率17.8%.
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| 关 键 词： | 两级 功率放大器 GaAs 单片 |
A Two-Stage MMIC Power Amplifier |
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| Abstract: | A simple design method of a two-stage MMIC power amplifier is discussed, including MESFET model optimization and parameters abstracting, circuit design and analysis. The idea of using GaAs FET small signal model and DC load line characteristics to predict optimun power match of the GaAs FETs has greatly reduced the amount of time and efforts on designing the match circuits. Fabrication technique and process are also discribed. The 1.9×0.9mm amplifier chip has 24dB maximum small signal gain, 300mW output power and 17.8% power-added efficiency with a relative bandwidth of 80% |
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