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Preparation and photoconduction of rapidly quenched films in the Bi2O3-TiO2 system
Authors:T. Sekiya  A. Tzuzuki  S. Kawakami  Y. Torii  N. Tsuboi  T. Futakuchi
Affiliation:(1) Government Industrial Research Institute, Nagoya, Hirate-cho, Kita-ku, 462 Nagoya, Japan;(2) Department of Applied Chemistry, Aichi Institute Technology, Yagusa-cho, 470-03 Toyota, Japan;(3) Toyame Perfectural Industrial Research Institute, Iino, 930 Toyama, Japan
Abstract:The rapidly quenched films in the Bi2O3-TiO2 system (0 to 60% TiO2) were prepared using a twin-roller type apparatus. The films precipitated Bi2O3 solid solutions of different types in the composition ranges, with TiO2 contents of 0 to 5, 7.5 to 10 and 12.5 to 40%, respectively. The first solid solution had a tetragonal structure of beta-form. The second, though also crystallized in the tetragonal structure, adopted a disordered modification of the beta-form. The third solid solution was delta-form (defect fluorite structure). The formation of amorphous phase commenced in the composition with 30% TiO2, and the films became completely amorphous beyond 50% TiO2. The quenched films showed a certain instability to decompose or transform into the different phase assemblage by annealing at higher temperatures (about 400 to 500° C, except 260° C for the pure Bi2O3 film). The quenched films were also characterized by a high photoconductivity. The photoconduction mechanism was suggested to be associated with a structural imperfection of Bi2O3 accompanied by a certain amount of pentavalent bismuth ion.
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