Effect of annealing temperature on 1.5 μm photoluminescence from Er-lmplanted 6H-SiC |
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Authors: | A J Steckl J Devkajan W J Choyke R P Devaty M Yoganathan S W Novak |
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Affiliation: | (1) Department of Electrical and Computer Engineering, University of Cincinnati, 45221-0030 Cincinnati, OH;(2) Department of Physics and Astronomy, University of Pittsburgh, 15260 Pittsburgh, PA;(3) Evans East, 08536 Plainsboro, NJ |
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Abstract: | The effect of post-implantation anneal on erbium-doped 6H-SiC has been investigated. 6H-SiC has been implanted with 330 keV
Er+ at a dose of 1 × 1013 /cm2. Er depth profiles were obtained by secondary ion mass spectrometry (SIMS). The as-implanted Er-profile
had a peak concentration of∼1.3 × 1018/cm3 at a depth of 770Å. The samples were annealed in Ar at temperatures from 1200 to 1900°C. The photoluminescence intensity
integrated over the 1.5 to 1.6 μm region is essentially independent of annealing temperature from 1400 to 1900°C. Reduced,
but still significant PL intensity, was measured from the sample annealed at 1200°C. The approximate diffusivity of Er in
6H SiC was calculated from the SIMS profiles, yielding values from 4.5 × 10−16 cm2/s at 1200°C to 5.5 × 10−15 cm2/s at 1900°C. |
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Keywords: | Diffusivity erbium implantation ions photoluminescence (PL) SiC |
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