P-type doping of GaAs by carbon implantation |
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Authors: | H Jiang R G Elliman J S Williams |
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Affiliation: | (1) Department of Electronic Materials Engineering, Australian National University, 0200 Canberra, ACT, Australia |
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Abstract: | The electrical properties of C-implanted <100> GaAs have been studied following rapid thermal annealing at temperatures in
the range from 750 to 950°C. This includes dopant profiling using differential Hall measurements. The maximum p-type activation
efficiency was found to be a function of C-dose and annealing temperature, with the optimum annealing temperature varying
from 900°C for C doses of 5 × 1013 cm−2 to 800°C for doses ≥5 × 1014cm−2. For low dose implants, the net p-type activation efficiency was as high as 75%; while for the highest dose implants, it
dropped to as low as 0.5%. Moreover, for these high-dose samples, 5 × 1015 cm−2, the activation efficiency was found to decrease with increasing annealing temperature, for temperatures above ∼800°C, and
the net hole concentration fell below that of samples implanted to lower doses. This issue is discussed in terms of the amphoteric
doping behavior of C in GaAs. Hole mobilities showed little dependence on annealing temperature but decreased with increasing
implant dose, ranging from ∼100 cm2/V·s for low dose implants, to ∼65 cm2/V·s for high dose samples. These mobility values are the same or higher than those for Be-, Zn-, or Cd-implanted GaAs. |
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Keywords: | Amphoteric doping carbon implantation GaAs |
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