The effects of processing conditions on the resistivity and microstructure of ruthenate-based thick film resistors

Elevated temperature processing parameters affect the microstructure and electrical behaviour of thick film resistors on alumina substrates. Blended resistors (DuPont QS87 series) with a nominal sheet resistivity of 56 kΩ/□ and temperature coefficient (TCR) less than ±100 p.p.m K-1 were fired in a laboratory process that simulated production ramp rates and atmosphere. Resistances were measured in situ during firing in a three-factor, replicated experiment with two levels and centrepoints for peak temperature, firing time and probe current. Room temperature resistance values after firing show a strong correlation to temperature and time, which both increase resistance and flatten the R(T) curve around room temperature. In situ resistance during firing shows a weaker correlation, inverse with temperature because the thermally activated glass conduction has a greater share of the composite conduction at firing temperature. X-ray diffration (XRD) shows lead ruthenate, alumina, and zirconium silicate present in the resistors. The ruthenate lattice parameters increase with increasing firing temperature and time. Qualitative particle coarsening is observed with increasing firing temperature and time by transmission electron microscopy (TEM). Energy dispersive spectroscopy (EDX) shows lead ruthenate, CuBi ruthenate and zirconium silicate crystallites dispersed in a lead silicate glass matrix, without much particle chaining. Resistance changes are attributed to increased separation of ruthenate particles by coarsening. This revised version was published online in August 2006 with corrections to the Cover Date.