Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers |
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| Authors: | S. V. Ivanov A. A. Toropov S. V. Sorokin T. V. Shubina N. D. Il’inskaya A. V. Lebedev I. V. Sedova P. S. Kop’ev Zh. I. Alferov H. -J. Lugauer G. Reuscher M. Keim F. Fischer A. Waag G. Landwehr |
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| Affiliation: | 1. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia
2. Physikalisches Institut, Universit?t Würzburg, Germany
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| Abstract: | High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described. Fiz. Tekh. Poluprovodn. 32, 1272–1276 (October 1998) |
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