| 平行磁场对GaAs/Al_xGa_(1-x)As异质结中无序二维电子的局域化效应的影响 |
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| 引用本文： | 周海平,郑厚植. 平行磁场对GaAs/Al_xGa_(1-x)As异质结中无序二维电子的局域化效应的影响[J]. 半导体学报, 1990, 11(6): 410-415 |
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| 作者姓名： | 周海平 郑厚植 |
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| 作者单位： | 中国科学院半导体研究所 北京(周海平)，中国高等科学技术中心 北京8730信箱(郑厚植) |
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| 摘 要： | 为解释以往在GaAs/n型AlGaAs异质结中所观测到的负平行磁阻现象(NPMR),本文首次提出了一新物理模型。在平行界面的磁场中,二维电子的子能带色散关系沿平行界面的k_y波矢方向发生位移。这种横向位移抑制了粒子-粒子通道中扩散传播子的发散行为,导致了在平行磁场中由局域化效应诱导的负磁阻效应。本文的物理模型与B、Lin的实验数据符合良好,并且由拟合求得了正确的电子在界面势阱中的平均纵向限制长度〈z〉和位相损失时间z(φ)。
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| 关 键 词： | 二维电子 量子输运特性 GaAs/n型AlGaAs |
Influence of a Parallel Magnetic Field on Localization of Disordered Two-Dimensional Electrons in GaAs/Al_xGa_(1-x)As Heterostructures |
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| Zhou Haiping/Institute of Semiconductors,Academia Sinca,BeijingZheng Houzhi/China Center ot Advanced Science and Technology. Influence of a Parallel Magnetic Field on Localization of Disordered Two-Dimensional Electrons in GaAs/Al_xGa_(1-x)As Heterostructures[J]. Chinese Journal of Semiconductors, 1990, 11(6): 410-415 |
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| Authors: | Zhou Haiping/Institute of Semiconductors Academia Sinca BeijingZheng Houzhi/China Center ot Advanced Science Technology |
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| Abstract: | A new physical model has been developed to explain previously observed negative parallelmagnetoresistances (NPMR) in terms of suppression of the localization in disordered two dimensionalelectron systems by lateral shift of subband parabolas in a magnetice field parallelto the two dimensional (2D) plane.Excellent agreement has been achieved between the resultsobtained with our model and B. Lin's data, leading to obtain proper values for both averageconfining length and dephasing time |
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| Keywords: | Quantum transport properties Two-dimensional electron gas GaAs/n-AlGa- |
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