表面碳化的硅纳米孔柱阵列的H2S室温电容传感特性

通过将硅纳米孔柱阵列(Si-NPA)进行高温碳化处理,制备出一种SiC/Si-NPA复合纳米体系。对SiC/Si-NPA的表面形貌和结构表征揭示,生长于Si-NPA上的SiC薄膜由具有立方结构的SiC纳米颗粒组成,厚度为～200 nm。SiC/Si-NPA整体上保持了Si-NPA原有的柱状阵列结构特征。对浓度介于0～1 200×10-6的H2S气体的室温传感性能测试表明,SiC/Si-NPA对H2S气体的电容响应灵敏度可高达790%,而其对400×10-6浓度H2S气体的响应和恢复时间则分别为170 s和200 s,元件具有较好的测量重复性和稳定性。SiC/Si-NPA可能是一种室温条件下较为理想的H2S气体传感材料。

Room-temperature H2S capacitive sensing properties of surface- carbonized silicon nanoporous pillar array

Through a high-temperature thermal treatment process,the surface of silicon nanoporous pillar array(Si-NPA)was carbonized and a SiC/Si-NPA nanocomposite system was prepared.The characterization on the surface morphology and structure disclosed that the SiC film grown on Si-NPA was composed of cubic-structure SiC nanoparticles with a thickness of ~200 nm.The architectural feature of the regular pillar array for Si-NPA was remained in SiC/Si-NPA.The measurements on the room-temperature H2S sensing properties in a gas concentration range of 0~1 200×10-6 proved that the capacitive response sensitivity of SiC/Si-NPA to H2S could be as high as 790%,while the response and recovery times obtained for H2S gas with a concentration of 400×10-6 were determined to be ~170 s and 200 s,respectively.The sensor exhibited an excellent measurement reproducibility and stability.Our results indicated that SiC/Si-NPA might be an ideal sensing material for developing H2S gas sensors being operated at room temperature.