Barrier-Layer Scaling of InAlN/GaN HEMTs |
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Authors: | Medjdoub F. Alomari M. Carlin J.-F. Gonschorek M. Feltin E. Py M.A. Grandjean N. Kohn E. |
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Affiliation: | Univ. of Ulm, Ulm; |
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Abstract: | We discuss the characteristics of high-electron mobility transistors with barrier thicknesses between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition. The maximum drain current (at VG = 2.0 V) decreased with decreasing barrier thickness due to the gate forward drive limitation and residual surface-depletion effect. Full pinchoff and low leakage are observed. Even with 3-nm ultrathin barrier, the heterostructure and contacts are thermally highly stable (up to 1000degC). |
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