| ZnO基紫外探测器的研究进展 |
| |
| 引用本文： | 赵懿琨,连洁,张飒飒,王公堂,宫文栎,于元勋,卜刚. ZnO基紫外探测器的研究进展[J]. 材料导报, 2006, 20(1): 109-112 |
| |
| 作者姓名： | 赵懿琨 连洁 张飒飒 王公堂 宫文栎 于元勋 卜刚 |
| |
| 作者单位： | 山东大学信息科学与工程学院,济南,250100;山东师范大学物理学院,济南,250014;山东省教育学院数理系,济南,250013 |
| |
| 基金项目： | 山东省优秀中青年科学家科研奖励基金 |
| |
| 摘 要： | ZnO是一种新型的宽带隙半导体光电材料,可用于制作高性能的紫外探测器,是未来半导体紫外探测器的发展重点.介绍了ZnO基紫外探测器常见的器件结构、探测材料的基本特性和主要制备方法,以及器件近期的研究进展,并扼要分析了其今后的发展方向.
|
| 关 键 词： | ZnO薄膜 紫外探测器 宽带隙半导体 |
Recent Advances in Research on UV Detector Based on ZnO |
| |
| ZHAO Yikun,LIAN Jie,ZHANG Sasa,WANG Gongtang,GONG Wenli,YU Yuanxun,BU Gang. Recent Advances in Research on UV Detector Based on ZnO[J]. Materials Review, 2006, 20(1): 109-112 |
| |
| Authors: | ZHAO Yikun LIAN Jie ZHANG Sasa WANG Gongtang GONG Wenli YU Yuanxun BU Gang |
| |
| Abstract: | ZnO is a novel material for wide-band photoelectric semiconductor which can be used in producing ultravioler(UV) detectors with high performance. It is believed that the UV detectors based on ZnO films will be one of the development trends in semiconductor UV detectors in the near future. This paper describes the struture and study advsances of the UV detectors based on ZnO thin films in detail. Meanwhile,the structural,optical and electrical properties of ZnO films are summarized, the methods for preparing it and recent research progress in UV detectors are reviewed. And some development features in the coming years are also briefly analyzed. |
| |
| Keywords: | ZnO films UVdetector wide-band semiconductor |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
