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Influence of metal gate and capping film stress on TANOS cell performance |
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| Authors: | M. Czernohorsky,T. MeldeV. Beyer,M.F. BeugJ. Paul,R. HoffmannR. Knö fler,A.T. Tilke |
| Affiliation: | a Fraunhofer Center Nanoelectronic Technologies (CNT), 01099 Dresden, Germany b Infineon Technologies Austria, 9500 Villach, Austria c NaMLab gGmbH, 01187 Dresden, Germany d Physikalisch Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany |
| Abstract: | In this work it is shown that film stress in the gate stack of TANOS NAND memories plays an important role for cell device performance and reliability. Tensile stress induced by a TiN metal gate deteriorates TANOS cell retention compared to TaN gate material. However, the erase saturation level as well as cell endurance is improved by the use of a TiN gate. This trade-off between retention and erase saturation for TANOS cells is elaborated in detail. |
| Keywords: | Charge trapping Flash memory TANOS |
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