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Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (0 0 1)
Authors:C. Wiemer  S. Baldovino  L. LamagnaM. Perego  S. Schamm-ChardonM. Fanciulli
Affiliation:a Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
b Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Milano, Italy
c CEMES-CNRS and Université de Toulouse, nMat group, BP 94347, 31055 Toulouse Cedex 4, France
Abstract:Er-doped HfO2 thin films with Er content ranging from 0% to 15% are deposited by atomic layer deposition on native oxide free Ge(001). The crystallographic phase is investigated by X-ray diffraction and is found to depend on the Er%. The cubic fluorite structure develops on Ge for Er% as low as 4% and is stable after annealing at 400 °C in N2. Microstrain increases with increasing the Er content within the fluorite structure. Time of flight secondary ion mass and electron energy loss spectroscopy evidence a Ge diffusion from the substrate that results in the formation of a Ge-rich interfacial region which does not present a structural discontinuity with the oxide. The diffusion of Ge is enhanced by the annealing and causes a reordering of the crystal lattice. In annealed films the interface defect density measured by low temperature conductance measurements is found to decrease with decreasing the Er content.
Keywords:Interface defect density   Doped-HfO2   X-ray diffraction   Microstrain   Conductance method
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