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CaF2 surface passivation of lead selenide grown on BaF2 |
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| Authors: | Shaibal Mukherjee D. LiG. Bi J. MaS.L. Elizondo A. GautamZ. Shi |
| Affiliation: | a Department of Electrical Engineering, Indian Institute of Technology-Indore, Indore 452017, India b School of Electrical and Computer Engineering, University of Oklahoma, OK 73019, USA c Nanolight, Inc., 710 Asp Ave., Suite 303, Norman, OK 73069, USA d School of Aerospace and Mechanical Engineering, University of Oklahoma, OK 73019, USA |
| Abstract: | A new method of surface passivation of PbSe epitaxial layers by growing a thin epitaxial CaF2 layer is proposed. Improvement in photoluminescence (PL) intensity is observed when the PbSe layer is passivated. The minority carrier lifetime (τ), measured by photo-current decay method corroborates PL measurements and shows a consistent, albeit not considerable, improvement in the lifetime of PbSe samples after surface passivation. The positive effect of surface passivation, especially at low heat-sink temperature, offered by a new passivating material is critically important for IV-VI material-based infrared detector and sensor applications. |
| Keywords: | CaF2 passivation Minority carrier lifetime Photoluminescence Lead salts |
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