Implementation of electron beam grey scale lithography and proximity effect correction for silicon nanowire device fabrication |
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Authors: | Jens Bolten Thorsten WahlbrinkMathias Schmidt Heinrich DB GottlobHeinrich Kurz |
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Affiliation: | AMO GmbH, AMICA, Otto-Blumenthal-Straße 25, D-52074 Aachen, Germany |
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Abstract: | An electron beam lithography exposure strategy combining efficient proximity effect correction (PEC) with multi-pass grey scale is compared with a more conventional strategy based on a single-pass exposure without PEC. Exposure results for different types of nanowire structures are presented. Line edge and line width roughness (LER and LWR) values for both approaches are determined. The novel exposure strategy presented in this work reduced LER by ∼25% and LWR by ∼40%. |
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Keywords: | Electron beam lithography Nanowires Proximity effect correction Grey scale lithography LER LWR |
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