Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices |
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Authors: | C Adelmann D LinL Nyns B SchepersA Delabie S Van ElshochtM Caymax |
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Affiliation: | Imec, Kapeldreef 75, B-3001 Leuven, Belgium |
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Abstract: | TaSiOx thin films with Si/(Ta + Si) mole fractions between 0 and 0.6 have been deposited using atomic-layer deposition on Si and InGaAs at 250 °C. Interface defects on InGaAs were on the order of 1012 cm−2 eV−1, which is comparable to state-of-the-art Al2O3 deposited by atomic-layer deposition using Al(CH3)3 and H2O while the dielectric permittivity of TaSiOx is considerably higher. |
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Keywords: | III-V Semiconductors InGaAs MOS devices Tantalum silicate |
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