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A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric |
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| Authors: | CH FuKS Chang-Liao YA ChangYY Hsu TH TzengTK Wang DW HehPY Gu MJ Tsai |
| Affiliation: | a Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan, ROC b National Nano Device Laboratories, Hsinchu 30078, Taiwan, ROC c Electronics and Opto-Electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan, ROC |
| Abstract: | Annealing effects on electrical characteristics and reliability of MOS device with HfO2 or Ti/HfO2 high-k dielectric are studied in this work. For the sample with Ti/HfO2 higher-k dielectric after a post-metallization annealing (PMA) at 600 °C, its equivalent oxide thickness value is 7.6 Å and the leakage density is about 4.5 × 10−2 A/cm2. As the PMA is above 700 °C, the electrical characteristics of MOS device would be severely degraded. |
| Keywords: | Higher-k Gate dielectric HfO2 Ti EOT |
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