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Reliability and gate conduction variability of HfO2-based MOS devices: A combined nanoscale and device level study |
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| Authors: | A. Bayerl,M. LanzaM. Porti,F. CampabadalM. Nafrí a,X. AymerichG. Benstetter |
| Affiliation: | a Dept. Eng. Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain b Institut de Microelectrònica de Barcelona, IMB-CNM, CSIC, 08193 Bellaterra, Barcelona, Spain c Dept. Electrical Engineering, Deggendorf University of Applied Sciences, 94469 Deggendorf, Germany |
| Abstract: | The electrical properties and reliability of MOS devices based on high-k dielectrics can be affected when the gate stack is subjected to an annealing process, which can lead to the polycrystallization of the high-k layer. In this work, a Conductive Atomic Force Microscope (C-AFM) has been used to study the nanoscale electrical conduction and reliability of amorphous and polycrystalline HfO2 based gate stacks. The link between the nanoscale properties and the reliability and gate conduction variability of fully processed MOS devices has also been investigated. |
| Keywords: | MOS devices Atomic Force Microscopy Reliability Variability High-k dielectric High-k crystallization |
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