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Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs |
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| Authors: | Hyuk-Min KwonWon-Ho Choi In-Shik HanMin-Ki Na Sang-Uk ParkJung-Deuk Bok Chang-Yong KangByoung-Hun Lee Raj JammyHi-Deok Lee |
| Affiliation: | a Dept. of Electronics Engineering, Chungnam National Univ., Yusong-Gu, Daejeon 305-764, Republic of Korea b The University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758, USA c International SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741, USA d Dept. of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Buk-Gu, Gwangju 500-712, Republic of Korea |
| Abstract: | In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is calculated to be 0.829 eV from Schottky emission model. Fowler-Nordheim tunneling barrier height was 0.941 eV at high electric field regions and the trap energy level extracted using Frenkel-Poole emission model was 0.907 eV. From the deviation of weak temperature dependence for gate leakage current at low electric field region, TAT mechanism is also considered. |
| Keywords: | High-k HfLaSiON Gate current Frenkel-Poole (F-P) emission Fowler-Nordheim (F-N) tunneling Schottky emission Trap-assisted tunneling (TAT) Trap energy level |
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