A comparative 1/f noise study of GeOI wafers obtained by the Ge enrichment technique and the Smart Cut technology |
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Authors: | M Valenza J El HusseiniJ Gyani F MartinezM Bawedin C Le RoyerE Augendre JF Damlencourt |
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Affiliation: | a IES - UNIVERSITE MONTPELLIER II - UMR CNRS 5214, Place E. Bataillon, 34095 Montpellier Cedex 5, France b CEA-LETI Minatec, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France |
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Abstract: | This paper presents an experimental investigation of Low-frequency Noise (LFN) measurements on Germanium-On-Insulator (GeOI) PMOS transistors processed on different wafers. The wafers are obtained by Ge enrichment technique and by Smart Cut™ technology. The slow oxide trap densities of back interface are used as a figure of merit to evaluate the process. The Smart Cut™ process is evaluated by studying GeOI pMOSFETs, and the enrichment process by studying Si1−xGex (x = 25% and 35%) pMOSFETs. The buried oxide is used as a back gate for experimental purposes. The extracted values are of the same order of magnitude for both processes and are close to those of state of art buried oxide SiO2/Si interfaces, demonstrating that both the Smart Cut™ and enrichment techniques produce equally good quality interfaces. |
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Keywords: | PMOS GeOI SiGe 1/f Noise Trap interface density |
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