Schottky barrier SOI-MOSFETs with high-k La(2)O(3)/ZrO(2) gate dielectrics |
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| Authors: | Henkel C Abermann S Bethge O Pozzovivo G Klang P Stöger-Pollach M Bertagnolli E |
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| Affiliation: | a Vienna University of Technology, Institute for Solid State Electronics, Vienna 1040, Austria
b Vienna University of Technology, University Service Center for Transmission Electron Microscopy, Vienna 1040, Austria |
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| Abstract: | Schottky barrier SOI-MOSFETs incorporating a La2O3/ZrO2 high-k dielectric stack deposited by atomic layer deposition are investigated. As the La precursor tris(N,N′-diisopropylformamidinato) lanthanum is used. As a mid-gap metal gate electrode TiN capped with W is applied. Processing parameters are optimized to issue a minimal overall thermal budget and an improved device performance. As a result, the overall thermal load was kept as low as 350, 400 or 500 °C. Excellent drive current properties, low interface trap densities of 1.9 × 1011 eV−1 cm−2, a low subthreshold slope of 70-80 mV/decade, and an ION/IOFF current ratio greater than 2 × 106 are obtained. |
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| Keywords: | Atomic layer deposition Lanthanum-oxide (La2O3) Zirconium-oxide (ZrO2) High-k dielectric Schottky-barrier MOSFET Silicon-on-insulator |
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