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Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs |
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| Authors: | Ki-Won KimSung-Dal Jung Dong-Seok KimKi-Sik Im Hee-Sung KangJung-Hee Lee Youngho BaeDae-Hyuk Kwon Sorin Cristoloveanu |
| Affiliation: | a School of Electronic Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Republic of Korea b Department of Electronics Engineering, Uiduk University, Gyeongju 780-713, Republic of Korea c School of Electronic Information and Communication Engineering, Kyungil University, Gyeongsan 712-701, Republic of Korea d IMEP, Grenoble Polytechnic Institute, Minatec, Grenoble, France |
| Abstract: | Normally-off GaN-MOSFETs with Al2O3 gate dielectric have been fabricated and characterized. The Al2O3 layer is deposited by ALD and annealed under various temperatures. The saturation drain current of 330 mA/mm and the maximum transconductance of 32 mS/mm in the saturation region are not significantly modified after annealing. The subthreshold slope and the low-field mobility value are improved from 642 to 347 mV/dec and from 50 to 55 cm2 V−1 s−1, respectively. The ID-VG curve shows hysteresis due to oxide trapped charge in the Al2O3 before annealing. The amount of hysteresis reduces with the increase of annealing temperature up to 750 °C. The Al2O3 layer starts to crystallize at a temperature of 850 °C and its insulating property deteriorates. |
| Keywords: | GaN MOSFETs Normally-off Charge trapping Interface Al2O3 |
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