High mobility strained Si0.5Ge0.5/SSOI short channel field effect transistors with TiN/GdScO3 gate stack |
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Authors: | RA MinamisawaM Schmidt E Durgun ÖzbenJMJ Lopes JM HartmannKK Bourdelle J SchubertQT Zhao D Buca S Mantl |
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Affiliation: | a Peter Gruenberg Institute (PGI 9-IT) and JARA-FIT, Forschungszentrum Juelich, 52425 Juelich, Germany b CEA-LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France c SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France |
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Abstract: | Short channel p-type metal-oxide-semiconductor field effect transistors (MOSFETs) with GdScO3 gate dielectric were fabricated on a quantum well strained Si/strained Si0.5Ge0.5/strained Si heterostructure on insulator. Amorphous GdScO3 layers with a dielectric constant of 24 show small hysteresis and low density of interface states. All devices show good performance with a threshold voltage of 0.585 V, commonly used for the present technology nodes, and high Ion/Ioff current ratios. We confirm experimentally the theoretical predictions that the drive current and the transconductance of the biaxially strained (1 0 0) devices are weakly dependent on the channel orientation. The transistor’s hole mobility, extracted using split C-V method on long channel devices, indicates an enhancement of 90% (compared to SiO2/SOI transistors) at low effective field, with a peak value of 265 cm2/V s. The enhancement is however, only 40% at high electrical fields. We demonstrate that the combination of GdScO3 dielectric and strained SiGe layer is a promising solution for gate-first high mobility short channel p-MOSFETs. |
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Keywords: | Strained Si SiGe High-k dielectrics Silicon on insulator Advanced MOSFET |
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