|
|||||
|
|
Fabrication and characterization of p-n junctions based on ZnO and CuPc |
|
| Authors: | R.K. Gupta F. Yakuphanoglu K. GhoshP.K. Kahol |
| Affiliation: | a Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, MO 65897, USA b Department of Physics, Faculty of Science, Firat University, Elazig, Turkey c Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia |
| Abstract: | p-n Junctions based on zinc oxide (ZnO) and copper-phthalocyanine (CuPc) were fabricated using pulsed laser deposition and thermal evaporator techniques, respectively. Current-voltage (I-V) characteristics of the ZnO-CuPc junction showed rectifying behavior. Various junction parameters such as barrier height and ideality factor were calculated using I-V data and observed to be 0.63 ± 0.02 eV and 4.0 ± 0.3, respectively. Cheung and Norde’s method were used to compare the junction parameters obtained by I-V characteristics. |
| Keywords: | p-n Junction ZnO CuPc Pulsed laser Thermal evaporator Thin films Semiconductor |
| 本文献已被 ScienceDirect 等数据库收录！ | |