Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

We developed a quantum-mechanical simulation code to study subthreshold performances and carrier quantum confinement in double-gate MOSFETs with high-mobility channel materials like Ge and III-V semiconductors. The code is based on the two-dimensional and self-consistent numerical solving of Poisson and Schrödinger equations coupled with the drift-diffusion transport equation. We systematically evaluate and analyze drain-induced barrier lowering and carrier quantum confinement in Si, Ge, In_0.53Ga_0.47As and GaAs based double-gate devices. Results show that SCEs in In_0.53Ga_0.47As and GaAs devices are lower than in Si and Ge counterparts. However, when the channel film thickness is reduced, carrier confinement is found to strongly impact double-gate device operation with high-mobility materials owing to their low confinement effective mass in the lowest energy valley.