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Shallow trench isolation based on selective formation of oxidized porous silicon |
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| Authors: | A Gharbi B RemakiA Halimaoui D BensahelA Souifi |
| Affiliation: | a Institut des Nanotechnologies de Lyon (INL) - UMR5270 CNRS, INSA de Lyon, Université de Lyon, 7 Avenue Jean Capelle Villeurbanne F-69621, France b Institut des Nanotechnologies de Lyon (INL) - UMR5270 CNRS, Université Lyon 1, Université de Lyon, 7 Avenue Jean Capelle Villeurbanne F-69621, France c STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France |
| Abstract: | We have studied the porous silicon (PS) formation dependence on the substrate doping concentration as a selective tool to form locally oxidized regions in silicon wafers. This approach could be used for electrical isolation in CMOS circuits as a promising alternative to the shallow trench isolation STI process which begins to show some limitations (voiding and dishing) for the most advanced technologies. |
| Keywords: | Oxidized porous silicon Isolation |
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