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Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing |
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| Authors: | Zefang Zhang Weixia Yan Lei Zhang Weili Liu Zhitang Song |
| Affiliation: | a State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China b Shanghai Xinanna Electronic Science & Technology Co. Ltd., Shanghai 201506, China c Graduate School of the Chinese Academy of Sciences, Beijing 100049, China |
| Abstract: | The effect of mechanical process parameters such as down force and rotation speed on friction behavior and material removal rate (MRR) was investigated during chemical mechanical polishing (CMP) of sapphire substrate. It was found that the increase in both rotation speed and down force can enhance the MRR and friction force almost linearly depends on the down force and rotation speed. The coefficient of friction (COF) decreases with increasing rotation speed under a fixed down force but keeps constant regardless of variation in down force under a fixed rotation speed. Moreover, the relationship between friction force and MRR was obtained. MRR was proportional to friction force with increasing down force whereas converse proportional to that with increasing the rotation speed. In addition, MRR data are fitted to the Preston equation in the sapphire CMP. |
| Keywords: | CMP Mechanical process parameters Friction force MRR Sapphire |
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