Microwave FinFET modeling based on artificial neural networks including lossy silicon substrate |
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Authors: | Zlatica Marinkovi? Giovanni CrupiDominique MM-P Schreurs Alina CaddemiVera Markovi? |
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Affiliation: | a University of Niš, Faculty of Electronic Engineering, 18000 Niš, Serbia b University of Messina, Dipartimento di Fisica della Materia e Ingegneria Elettronica, 98166 Messina, Italy c Katholieke Universiteit Leuven, Electronic Engineering Department, B-3001 Leuven, Belgium |
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Abstract: | Nowadays, FinFET represents a new and promising transistor structure for the aggressive downscaling of the CMOS technology. Typically, the small-signal modeling for FinFET is based on compact models or on equivalent circuit representations. As an alternative to such approaches, a small-signal behavioral model based on artificial neural networks is developed in this paper. Particular attention is devoted to modeling the low-frequency kinks of the scattering parameters, due to the lossy silicon substrate. The model is efficient and accurate, as confirmed by the comparison between measured and simulated microwave behavior. |
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Keywords: | Artificial neural networks FinFET Kink effect Lossy substrate Microwave model Nanotechnology |
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