Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric |
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Authors: | Muhammad Adi Negara Niti GoelDaniel Bauza Gerard GhibaudoPaul K. Hurley |
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Affiliation: | a Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland b IMEP-LHAC, Minatec-INPG, BP 257, 38016 Grenoble, France c SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, USA |
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Abstract: | This paper reports on an investigation of interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric. Interface state density values of Dit ∼ 5 × 1012 cm−2 eV−1 were extracted using sub-threshold slope analysis and charge pumping technique. The same order of magnitude of trap density was found from low frequency noise measurements. A peak effective electron mobility of 1200 cm2/Vs has been achieved. For these surface channel In0.53Ga0.47As n-MOSFETs, it was found that η parameter, an empirical parameter used to calculate the effective electric field, was ∼0.55, and is to be comparable to the standard value found in Si device. |
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Keywords: | InGaAs High-k III-V Metal-oxide-semiconductor field-effect transistor (MOSFET) Interface states η Parameter |
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