Influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation in n-MOSFETs |
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| Authors: | Dongwoo KimSeonhaeng Lee T.K. OhS.Y. Cha S.J. HongBongkoo Kang |
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| Affiliation: | a Department of Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja-Dong, Pohang, Kyungpook 790-784, Republic of Korea
b Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Ichon-si, Kyungki-do 467-701, Republic of Korea |
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| Abstract: | This paper proposes an electrical method of extracting mechanical stress in n-MOSFETs and analyzes the influence of dummy active patterns on mechanical stress induced by spin-on-glass-filled shallow trench isolation (SOG-filled STI). The proposed method requires only the maximum transconductance gm,max and measured subthreshold current Id(sub.), eliminating the effect of deviations of the mobility μ and effective channel length Leff that occurred in a previous method using μ. In addition, it eliminates the measurement error due to the drain induced barrier lowering (DIBL) effect in a previous method using Id(sub.). The tensile stress σt in the experimental n-MOSFETs was measured as several hundred mega Pascals. An increase of separation distance d between dummy active regions and the Si active region resulted in a decrease of σt for d > 0.2 μm. But, σt decreased when d decreased from 0.2 to 0.09 μm. |
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| Keywords: | Mechanical stress Shallow trench isolation (STI) Dummy active patterns Subthreshold current Drain induced barrier lowering (DIBL) |
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